PM-PP-68:Langmuir-Blodgett monolayer masked chemical etching:an approach to broadband antireflective

• 作 者: Juanyuan Hao Nan Lu Lifeng Chi
• 机 构: State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin Universi
• 出 处: 第13届亚洲化学大会(13th Asian Chemical Congress)
• 发表日期: 2009年12期
• 关键词: antireflective Si pyramidal arrays LB monolayer mask chemical etching

　　We report a simple bottom-up approach for the fabrication of highly antireflective optical surfaces.The Langrnuir-Blodgett (LB) monolayer with domain structures was used as a mask for selective etching of Si in a KOH solution.The obtained pyramidal structures can reduce the reflectivity to less than 6% at the wavelengths from 400 nm to 2400 nm.This technique combines the simplicity and scalability of self-assembly and cost benefits of chemical etching.These antireflective structures may have potential applications in optical devices and solar cells.Moreover, the reflectivity of polymer materials can also be reduced by transferring the pyramidal structures onto their surfaces via molding and nanoimprint lithography (NIL).