Tunable band gap and carrier mobility of monolayer black phosphorus by the electric field and strain

• 作 者: TengfeiCao[1]XiboLi[2]Li-MinLiu[1]JijunZhao[3]
• 机 构: Beijing Computational Science Research Center,Beijing 100084,China
• 出 处: The 15th ICQC International Congress of Quantum Chemistry(第1
• 发表日期: 2015年期

　　Electric field and in-plane strain are used to tailor the electronic structures of the monolayer Black Phosphorus(M-BP)based on first-principle calculations.The results show that the electric field effectively reduces the band gap,and the strain either increases or reduces the band gap.