Giant Interfacial Perpendicular Magnetic Anisotropy in MgO/CoFe/Capping Layer Structure

• 作 者: Shouzhong Peng Weisheng Zhao Junfeng Qiao Li Su Jiaqi Zhou Hongxin Yang Qianfan Zhang Youguang Zhang Cécile Grèzes Pedram Khalili Amiri Kang L.Wang
• 机 构: Fert Beijing Institute,Beihang University,Beijing 100191,China;School of Electronic and Information
• 出 处: 中国物理学会2016年秋季会议
• 发表日期: 2016年5期
• 关键词: Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction Magnetic Random Acces

　　Magnetic tunnel junction(MTJ)based on CoFeB/MgO/CoFeB structure is of great interest due to its application in the spin-transfer-torque magnetic random access memory(STT-MRAM)[1].In order to achieve a high thermal stability,a strong interfacial perpendicular magnetic anisotropy(PMA)is required [2].It has been proven that the capping layer coating on the CoFeB layer can significantly enhance the PMA [3-5].However,the present PMA remains insufficient in achieving the required thermal stability for high-density STT-MRAM applications [6].