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Zinc Oxide (ZnO)-based materials are widely ultized in applications of electronic devices,optoelectronic devices and sensors [1,2].Several methods have been developed to deposit ZnO-based thin films and ZnO-based nanorod arrays on various substrates [3].However, one of the important issues suffered earlier and received interested discussions when dealing with the deposition of ZnO-based materials owing to the fact that the ZnO-based materials are natural n-type behaviors due to the compensation effect of the shallow donors induced by oxygen Vacancies and Zinc interstitials.