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  5. Characterization of Poly-Si Thin Film Fabricated by Plasma Enhanced Chemical Vapor Deposition Method

Characterization of Poly-Si Thin Film Fabricated by Plasma Enhanced Chemical Vapor Deposition Method

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：ppt1000
【摘 要】
：
Amorphous Si (a-Si) thin films of p+/p-/n+ were deposited on Si3N4/glass substrate for the solar cell application by using plasma enhanced chemical vapor deposition (PECVD) method.
【作 者】
：
Soonyong Kweon Jihyun Jeong Yuguo Tao Sergey Varlamov 
【机 构】
：
Chungju National University/Research Center for Sustainable Device & Eco-Materials, 50 Daehak-ro,Chu
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Si Thin Film PECVD Solar Cell Crystal Quality Transmittance 
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Amorphous Si (a-Si) thin films of p+/p-/n+ were deposited on Si3N4/glass substrate for the solar cell application by using plasma enhanced chemical vapor deposition (PECVD) method.
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