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Reversible switching from an insulator to a conducting magnet-New way toward high capacity memory de
【机 构】
：
ResearchInstituteforElectronicScience,HokkaidoUniversity,Sapporo,JapanGraduateSchoolofInformationSci
【出 处】
：
The 23rd International Workshop on Oxide Electronics (第23届国际
【发表日期】
：
2016年10期
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