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在三、五族半導體中,氮化鎵的能隙(Energy Gap)為3.4eV而氮化鋁則為6.2eV,具有較寬的能隙,以及介於藍光至紫外光之間的發光波段.因此是發光元件理想的材料,而奈米線對小尺度元件的設計,有很好的發展性,是目前受到產業界極大注目的半導體材料.
化學氣相沉積法生長一維三族氮化物
【摘 要】
：
在三、五族半導體中,氮化鎵的能隙(Energy Gap)為3.4eV而氮化鋁則為6.2eV,具有較寬的能隙,以及介於藍光至紫外光之間的發光波段.因此是發光元件理想的材料,而奈米線對小
【机 构】
：
OptoelectricPhysics,ChineseCultureUniversity,Taipei,Taiwan
【出 处】
：
2015台湾物理年会
【发表日期】
：
2015年1期
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