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Doping and defects controls are key problems in semiconductor device physics to effectively enhance the device properties.Tuning the dopants and defects is possible by changing the mechanical environment of the lattice.In this talk, I11 present my recent research results of different defect controlling techniques using first principles density functional theory method.We found that external strains can be effective strategies to tune dopant formations, dopant sites and intrinsic defects formation and defects types in various semiconductor systems.