High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

• 作 者: YangCui[1]RunXin[1]ZhihaoYu[1]YimingPan[2]Zhun-YongOng[3]XiaoxuWei[1]JunzhuanWang[1]YunWu[4]TangshengChen[4]YiShi[1]BaigengWang[2]Yong-WeiZhang[3]GangZhang[3]XinranWang[1]
• 机 构: National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering,and
• 出 处: The 6th International Conference on Nanoscience and Technolo
• 发表日期: 2015年期

　　WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides.The measured field-effect mobility thus far,however,is much smaller than theoretical predictions,dominated by extrinsic factors including charge traps and impurities.