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利用GaAs FET双栅芯片,在30×40mm的复合介质基片上,根据计算机优化结果,制作了三级双棚GaAs FET可变增益放大器。在2.2～3.7GHz频率范围内,典型小信号增益大于25dB;在2.5～3.0GHz频段,最高增益为36dB,典型平坦度为±0.7dB。改变第二栅偏置电压,放大器增益连续可变,典型动态增益范围为70dB。该放大器开关时间小于10ns。可用作高速调制器、高速开关。双栅GaAs FET芯片塑料封装,单电源供电(除二栅),使用方便,稳定可靠,初步试用已显示出它具有应用前景。
Using GaAs FET double-gate chip, a three-stage double-shelf GaAs FET variable gain amplifier was fabricated on a 30 × 40 mm composite dielectric substrate according to computer optimization results. In the frequency range of 2.2 ~ 3.7GHz, the typical small signal gain is greater than 25dB; in the 2.5 ~ 3.0GHz frequency band, the highest gain is 36dB, the typical flatness is ± 0.7dB. Changing the second gate bias voltage, the amplifier gain is continuously variable, with a typical dynamic gain range of 70dB. The amplifier switching time is less than 10ns. Can be used as a high-speed modulator, high-speed switch. Double-gate GaAs FET chip plastic package, a single power supply (except for the two gate), easy to use, stable and reliable, preliminary trial has shown its promising.