Problems of Modification of Oxide Materials for Optoelectronics by Means of Implantation of Silicon

来源 :IUPAC 5th International Symposium on Novel Materials and the | 被引量 : 0次 | 上传用户：dfdfdfdfgdfdfg

【作者】

：

D.Tetelbaum A.Mikhaylov A.Belov A.Ershov I.Chugrov A.Kasatkin O.Gorshkov

【机构】

：

Physico-Technical Research Institute of University of Nizhny Novgorod,Nizhny Novgorod,Russia

【出处】

：

IUPAC 5th International Symposium on Novel Materials and the

【发表日期】

：

2009年12期

【关键词】

：

silicon oxide dielectrics nanoclusters ion implantation luminescence

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Problems of Modification of Oxide Materials for Optoelectronics by Means of Implantation of Silicon

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