【摘 要】
：
A type of GaN-based UV detector is introduced in this paper,which is a metal-semiconductor-metal (MSM) UV detector,consisting of sapphire substrate,AlxGa1-xN buffer layer and GaN-based active layer.Th
【机 构】
：
Institute of Optoelectronics Technology,China Jiliang University No.258 Xueyuan Road,Hangzhou,Zhejia
论文部分内容阅读
A type of GaN-based UV detector is introduced in this paper,which is a metal-semiconductor-metal (MSM) UV detector,consisting of sapphire substrate,AlxGa1-xN buffer layer and GaN-based active layer.The buffer layer and active layer are grown on the substrate by metal organic chemical vapor deposition (MOCVD),and the two layers are all p-type Mg-doped.While,AlxGa1-xN buffer layer is divided into different sections because of the x value and doping concentration,the layer is exponential doping from 1018cm-3 to 1016cm-3.In the paper,the GaN relative properties and material growing process,the buffer layer structure and grow process,and the detector properties are introduced in detail in the paper.The detector dark current and responsibility are tested,the result shows that the detector has better performance than other detectors.Furthermore,the detector advantages and applications are given.
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