【摘 要】
：
As a layered-structure semiconductor material with wide band gap, MoO3 has been considered to be a promising candidate for application in gas sensor.Recently, gas sensor based on MoO3 have been found
【机 构】
：
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,and School of Mat
【出 处】
：
International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
As a layered-structure semiconductor material with wide band gap, MoO3 has been considered to be a promising candidate for application in gas sensor.Recently, gas sensor based on MoO3 have been found to have a response towards various gases such as H2S, NO2, NH3, trimethylamine, formaldehyde and H2 in the temperature range of 300-600 ℃.Although MoO3 films and nanorods are not sensitive to ethanol gas, it is found that the ultralong MoO3 nanobelts have a good sensitivity and selectivity to ethanol gas in our works.
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