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  5. Thermal Boundary Resistance at Au/Ge/Ge and Au/Si/Ge Interfaces

Thermal Boundary Resistance at Au/Ge/Ge and Au/Si/Ge Interfaces

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：kekedehome
【摘 要】
：
Amorphous Ge(a-Ge),crystalline Ge(c-Ge),and amorphous Si(a-Si)thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering.
【作 者】
：
Tianzhuo Zhan Yibin Xu Masahiro Goto Yoshihisa Tanaka Ryozo Kato Michiko Sasaki 
【机 构】
：
National Institute for Materials Science,China
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
【发表日期】
：
2015年5期
【关键词】
：
thermal boundary resistance thermoelectrics 
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　　Amorphous Ge(a-Ge),crystalline Ge(c-Ge),and amorphous Si(a-Si)thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering.
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