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γ′-Fe4N薄膜具有-100％的自旋极化率和767K的居里温度，是自旋电子学器件的候选材料。我们通过对向靶反应溅射的方法制备了多晶和外延γ′-Fe4N薄膜，研究了不同厚度γ′-Fe4N薄膜的结构、磁性和反常霍耳效应。
对向靶反应溅射单相Fe4N薄膜的反常霍耳效应
【摘 要】
：
γ′-Fe4N薄膜具有-100％的自旋极化率和767K的居里温度，是自旋电子学器件的候选材料。我们通过对向靶反应溅射的方法制备了多晶和外延γ′-Fe4N薄膜，研究了不同厚度γ′-Fe4N薄膜的结构、磁性和反常霍耳效应。
【机 构】
：
天津市低维功能材料物理与制备技术重点实验室,天津大学理学院,天津 300072
【出 处】
：
中国物理学会2015年秋季会议
【发表日期】
：
2015年7期
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