Microstructure and electrical properties of La-doped ZnO-based varistor thin films by sol-gel proces

• 作 者: DongXu[1]JiangBin[2]LeiJiao[2]HongxingXu[2]YuanhuaLin[3]XiaonongCheng[2]
• 机 构: School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China
• 出 处: 第16届全国固态离子学学术会议暨下一代能源材料与技术国际研讨会
• 发表日期: 2012年期

　　Microstructure and electrical properties of La-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated.XRD showed that most diffraction peaks of ZnO were equal, and the crystals of ZnO grew well.SEM and AFM results indicated that the samples have a good structure and lower surface roughness.The nonlinear V-I characteristics of the films show micro La2O3 develop the electrical properties largely and the best doped content is 0.3 mol%, with the leakage current is 0.252 μA,the threshold field is 150 V/mm and the nonlinear coefficient is 4.0 in detail.