论文部分内容阅读
Effect of energy band bending induced by ZrO2 nanocrystals precipitation on the memory characteristi
【机 构】
：
College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, P.R.China
【出 处】
：
第十一届中美华人纳米论坛
【发表日期】
：
2016年5期
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