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Quantum dot infrared photodetector (QDIP) is one of the important emerging devices in the field of infrared (IR) technology,and has received considerable attention in the past decade.The advantage using QDs as the active region of photodetectors originates from three-dimensional confinement for carriers,which offers normal incidence detection,and low dark currents and longer photocarrier lifetime (e.g.,compared to quantum wells (QWs)) owing to the phonon bottleneck effect.[1] Significant progress achieved in the past makes use of quantum dots and dots-in-a-well (DWELL) designs,based on n-type electrons.