论文部分内容阅读
The emerging GaN-on-Silicon technology for electronic and optoelectronic applications also has an impact on the MOCVD reactor design.To address these challenges we developed the AIX G5+ Planetary Reactor? for 5x200 mm GaN-on-Si applications.To assess the reactor performance we grew 5-fold InGaN LED structures with a total thickness of 5 μm.The homogeneous deposition of high quality device structures with excellent run to run reproducibility has been proven by HR-XRD,PL and Hall measurements.This paper also reports on special procedural measures and compatible reactor designs to completely remove carry-over effects between subsequent runs,which is crucial for the growth on Si to avoid Ga induced melt back etching.