Interfacial Conductivity of Mn-Co-Ni-O Thin Films and CBP Coating

• 作 者: Fei Zhang Zhiming Huang Jing Wu Cheng OuYang Wei Zhou Yanqing Gao
• 机 构: National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of
• 出 处: The 13th International Conference on Mid-Infrared Optoelectr
• 发表日期: 2016年10期
• 关键词: Mn1.5Co1Ni0.5O4thin film Organic coating Fermi level Multilayer Resistivity

　　Mn1.5Co1Ni0.5O4(MCNO)thin films were deposited on different materials by Chemical Solution Deposition(CSD)Method,and then CBP was spun-coated on MCNO thin film.The study shows that Mn1.5Co1Ni0.5O4 thin film deposited on Mn1.5Co1Ni0.35Cu0.15O4(MCNCuO)or Mn1.5Co1Ni0.2Cu0.15Sc0.15O4(MCNCuScO)thin film facilitates the electrical conductivity of MCNO/CBP multilayer.The energy gap between Fermi level of Mn1.5Co1Ni0.5O4 thin film and HOMO level of CBP film in MCNCuO/MCNO/CBP multilayer is smaller than the one in MCNCuScO/MCNO/CBP multilayer.The energy gap between the Fermi level of Mn1.5Co1Ni0.5O4 thin film and the HOMO level of CBP film in MnCo2O4/MONO/CBP multilayer is smaller than the one in NiMn2O4/MCNO/CBP multilayer.