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采用射频磁控溅射技术溅射CuS、ZnS、SnS2混合靶材,在玻璃衬底上沉积前驱体,然后硫化退火制备Cu2ZnSnS4(CZTS)薄膜,通过EDS能量色谱仪、X射线衍射仪对薄膜进行表征分析。结果表明,退火温度高于450℃制备的样品出现了3个明显峰位28.52°,47.48°和56.20°,分别对应Cu2ZnSnS4(112)、(220)和(312)晶面,而且随着退火温度的升高样品在(112)方向择优取向生长。根据谢乐公式计算晶粒尺寸表明,随着退火温度升高,晶粒尺寸变大,薄膜质量改善。EDS分析显示,薄膜组分为贫Cu富Zn,制备的薄膜较为纯净。
The CuS, ZnS and SnS2 mixed targets were sputtered by RF magnetron sputtering, and the precursors were deposited on the glass substrate. The CuZZnSnS4 (CZTS) thin films were prepared by sulfidation annealing. The films were characterized by EDS energy chromatograph and X-ray diffractometer Characterization analysis. The results show that there are three distinct peak positions of 28.52 °, 47.48 ° and 56.20 ° in the samples prepared at annealing temperature above 450 ℃, which correspond to the Cu 112 ZnSnS 4 (112), (220) and (312) planes, respectively. Of the elevated samples are preferentially oriented in the (112) direction. Calculating the grain size according to Scherrer’s formula shows that as the annealing temperature increases, the grain size becomes larger and the film quality improves. EDS analysis showed that the film components were poor Cu-rich and the prepared films were pure.