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5. Fabrication of GaAsBi laser diodes with 1.1-μm emission wavelength

Fabrication of GaAsBi laser diodes with 1.1-μm emission wavelength

来源 :第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain | 被引量 : 0次 | 上传用户：njliuyao

【作 者】

：

Masahiro Yoshimoto Ryo Yoshioka Hideki Kuruma Hiroyuki Nishinaka 

【机 构】

：

Department of Electronics, Kyoto Institute of Technology, Kyoto, Japan

【出 处】

：

第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain

【发表日期】

：

2016年11期

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