Robust spin injection induced by interfacial magnetic semiconductor in Co/ZnO and Co/ZnAlO films

来源 :中国物理学会2012年秋季学术会议 | 被引量 : 0次 | 上传用户：laden167

【摘要】

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【作者】

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Zhiyong Quan Xianpeng Zhang Wei Liu Xiaohong Xu G. A. Gehring

【机构】

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School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, Shanxi, China

【出处】

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中国物理学会2012年秋季学术会议

【发表日期】

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2012年9期

【关键词】

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Sputtering Magnetoresistance Spin injection Interfacial magnetic semiconductor

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Semiconductor spintronics is expected to one of the potential technologies which can outperform the conventional semiconductor devices.An important hurdle in this field is the inefficient injection of spin polarized currents from metallic ferromagnets into semiconductors due to the large mismatch in conductivities between them [1].

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Robust spin injection induced by interfacial magnetic semiconductor in Co/ZnO and Co/ZnAlO films

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