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In this paper,we reported on,for the first time,a novel gate-all-around nanowire junctionless transistor (GAAN JLT) with gradient channel doping profile.Device structure,analytical model based on the abrupt-depletion approximation,characterization and TCAD simulations are identified and discussed on the base of the device sensitivity upon current and temperature biasing.The source,drain and channel regions of the Junctionless transistor are doped with homogeneous doping polarity without any junctions or even the source and drain can be made of fully silicided materials or pure metals.