【摘 要】
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Wide band nitride-based semiconductor materials, such as Si3N4 (Eg=5.0 eV), BN (Eg=3.6-7.1 eV), were used widely as structure material.In order to expand th
【出 处】
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The 3rd International Symposium on Rare Earth Resource Utili
论文部分内容阅读
Wide band nitride-based semiconductor materials, such as Si3N4 (Eg=5.0 eV), BN (Eg=3.6-7.1 eV), were used widely as structure material.In order to expand their applications in optics, electronics and photoelectronics fields, efforts were paid to tune the band-gap of these wide band nitrides in our laboratory.Al doping strategy was employed to reduce the band-gap of Si3N4 nanobelts, and the shrinkage mechanism was investigated in detail.Experiment and theory calculation results indicated that Al-doped Si3N4 show a narrowed band-gap in 2.65 eV, owing to the peculiar Al-doping complex in the (102) plane.Yellow emission band peaked at 560 nm under the excitation of blue light was detected for Eu2+ containing Al doped α-Si3N4, indicating the potential application in white light emitting diodes (LEDs).
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