Mobility disorder dominated linear magnetoresistance in topological insulator Bi2Se3 thin films

• 作 者: Wen Jie Wang Kuang Hong Gao Zhi Qing Li
• 机 构: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology,Department of P
• 出 处: 中国物理学会2016年秋季会议
• 发表日期: 2016年5期
• 关键词: topological insulator linear magnetoresistance mobility disorder

　　In this work,the magnetoresistance of topological insulator Bi2Se3 thin films was found to increase linearly with increasing magnetic field up to 9 T and this linear magnetoresistance(LMR)decrease with increasing temperature from 2 K to 300 K.Theoretically,disorder-induced classical LMR can be modulated by mobility μ when Δμ/μ<1,and tuned by Δμ when Δμ/μ>1.Recently,the classical LMR has been observed in topological insulators,the magnitude of which can be tuned by mobility μ.