【摘 要】
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Inserting an AlN buffer layer in GaN substrate in LED manufacturing process can effectively improve the performance of LED optoelectronic devices and reduce
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Inserting an AlN buffer layer in GaN substrate in LED manufacturing process can effectively improve the performance of LED optoelectronic devices and reduce production cost.We have successfully developed AlN physical vapor deposition (PVD) system under years of experience in this field.The sapphire substrate can be 2” or 4” in diameter,and the surface profile flat or PSS.By systematically studying and optimizing the deposition conditions,the high -quality AlN film is achieved according to SEM,XRD and AFM measurement results.
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