Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-insulator Substrate

• 作 者: Weiyuan Duan[1] Jiantao Bian[2] Jian Yu[2] Jianhua Shi[2] Zhengxin Liu[2]
• 机 构: ResearchcenterforNewEnergyTechnology,ShanghaiInstituteofMicrosystemandInformationTechnology,235Cheng
• 出 处: 第13届全国博士生学术年会——新能源专题
• 发表日期: 2015年5期
• 关键词: Power generation silicon hetero-junction solar cell silicon-on-insulator (SOI) t

　　To achieve power generation on inte-grated circuit (IC) chips, a hydrogenated amorphous silicon (a-Si∶H)/crystalline silicon (c-Si) heterojunction solar cell was designed and fabricated on silicon-on-insulator (SOI) substrate, where a 9-μm epitaxial p-type c-Si layer served as light absorption layer and the buried SiO2 (BOX) as back surface passivation layer.It was found that a 1-μm heavily doped thin p+-layer was vital for improving the cell performances.Efficiency up to 12.7% with an open-circuit voltage of 679.7 mV was achieved on a 1.0 cm2 square cell.Device performance was also investigated by annealing at different temperatures.The results suggested that relatively large thickness of a-Si∶H and transparent conductive oxide (TCO)layers could improve thermal stability of the solar cells at temperature above 300℃.