E-field-induced Large Strain Mechanism and Temperature-dependent Properties in Zr doped 92.5%(Bi0.5N

• 作 者: Pin-YiChen[1]Cheng-SaoChen[2]Chi-ShunTu[3]Ting-LunChang[1]
• 机 构: Department of Mechanical Engineering,Ming-Chi University of Technology,New Taipei City 24301,Taiwan
• 出 处: The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
• 发表日期: 2014年期

　　The x%Zr(x=0-4)doped 92.5%(Bi0.5Na0.5)TiO3-7.5%BaTiO3(abbreviated as BNT7.5BT-xZr)lead-free ceramics for temperature and composition dependences of dielectric,ferroelectric,piezoelectric properties were investigated.BNT7.5BT-2Zr ceramic reveals a large strain response up to 0.353%at room temperature and the normalized strain Smax/Emax as high as 588 pm/V under an E-field~60 kV/cm.According to in situ E-field XRD and TEM analysis,the BNT7.5BT-0Zr ceramic displays a non-ergodic relaxor with an irreversible phase transition from E-field-induced P4bm nanodomains to long-renge-ordered P4mm domains.