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It is well known that the neutral radicals or small molecules called as precursor play an important role in the film growth, but no exact knowledge about the distinguishing species which depending on the plasma condition.In here with Hexamethyldisiloxane ((CH3)3-Si-O-Si-(CH3)3, HMDSO) as monomer the plasma enhanced chemical vapor deposition (PECVD) is employed to deposit silicon dioxide.In this paper it is emphasized on the neutral radicals and small molecules by quadrupolar mass spectrometer in-situ diagnostic for SiOx deposition.