Temperature-manipulated spin transport through a quantum dot transistor

• 作 者: Fenghua Qi Guojun Jin
• 机 构: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Na
• 出 处: 中国物理学会2011年秋季学术会议
• 发表日期: 2011年9期
• 关键词: quantum dot temperature bias spin transport

The rectification effects in the systems based on quantum dots have attracted many researcherseyes.It was found that by changing the electric bias applied to a NM-QD-FM system,the current polarization has a diode effect for a particular bias range.Afterward,tunable spin diodes have been realized experimentally.However,these results are all generated by controlling electric bias.