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分析微波脉冲作用下PIN器件效应机理,基于半导体物理方程,热传导模型研究PIN器件物理模型。基于大功率微波脉冲作用下的器件高温强场特性的,选择Sentaurus-TCAD软件中的相关物理模型,建立器件多物理模型-电路的联合仿真模型;开展验证性实验结果与仿真结果在大于30dBm的功率注入时比较吻合,证明仿真中使用的物理模型适用于PIN限幅器大功率微波脉冲效应机理分析。
The effect mechanism of PIN device under microwave pulse was analyzed. The physical model of PIN device was studied based on semiconductor physical equation and thermal conduction model. Based on the high temperature and strong field characteristics of devices under high power microwave pulse, the related physical model in Sentaurus-TCAD software is selected to establish the co-simulation model of multi-physics device-circuit of the device. The results of the verification experiment and the simulation results are in the range of more than 30dBm Power injection is more consistent, prove that the physical model used in the simulation is suitable for PIN limiters high-power microwave pulse effect mechanism analysis.