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By using electrochemical measurement techniques and based on the point-defect model (PDM),this work studied the point-defect conductive property of the n-type semiconducting anodic oxide film formed on titanium under steady-state condition within the passive potential region of ca.0–7 V in 1.0 M HClO4 solution.The point-defect transport property was characterized by the steady-state current density (iss) through the film and the diffusion coefficient (DO) of the point defects in the film.It was demonstrated that with the increase of the film formation potentials,iss (and DO) show an exponentially dependent increase on the potential.This behavior of the oxide films formed on titanium is to some extent different from that of some other n-type anodic oxide films.The influence of potential on the changes in structure and crystallization of the oxide film on titanium was proposed to be taken as a reason for the potential-dependence of iss (and DO) observed in this work.It was also shown that within the passive potential region most of any change in the applied potential does appear predominantly as a change in the potential drop within the oxide film (only ca.6% of that drops across the film/solution interface).Additionally,a question about the values of the polarizability of the oxide film/solution interface (α) used and estimated within the frames of the PDM was raised and discussed at the end of this paper.