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Germanium is a promising candidate to replace silicon in Nanoelectronics due to its significantly higher electron and hole mobilities1.However,the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics2.By taking advantage of the impermeability of graphene,our experimental collaborators found that the insulating fluorinated graphene is able to act as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices3.