Controlled growth and atomic-scale characterizations of graphene and h-BN heterostructures on single

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:mikelau1
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  In-plane patched and vertically stacked heterostructures of graphene and hexagonal boron nitride(h-BN-G and G/h-BN,respectively)are both recent focuses of graphene research,considering of their tunable bandgap and intriguing physical properties.[1,2] However,the atomic scale feature of the two type heterostructures are still illegible.
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