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The discovery of high-mobility two-dimensional electron gas (2DEG) at the interface of two insulating oxides,LaAlO3 (LAO) and TiO2-terminated SrTiO3 (STO),1 has stimulated great interest in the development of oxide-based electronics.2 In particular,LAO/STO-based field-effect devices have attracted considerable attention as the tunability of interface conductivity using electric field.3 The tunability of conductivity at the LAO/STO interface is closely related to the change in capacitance of the field-effect devices.