Influence of thermal annealing on graphene oxide memory devices

来源 :International Conference on Molecular Electronic Materials a | 被引量 : 0次 | 上传用户：wcz741335565

【摘要】

：

【作者】

：

Shuhong Li Litao Zhao Wenjun Wang Mingdong Yi Jianhua Xu Xuexi Gao Bingyuan Zhang Yunlong Liu Wei Huang

【机构】

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Shandong Key Laboratory of Optical Communication Science and Technology,School of Physical Science &

【出处】

：

International Conference on Molecular Electronic Materials a

【发表日期】

：

2015年5期

【关键词】

：

graphene oxide annealing temperature memory devices the ON/OFF current ratio the

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We study the effects of annealing temperature on graphene oxide (GO) memory devices [e.g.,nonvolatile write-once-read-many-time memory cells based on GO] by analyzing the atomic force microscopy images of active layer surfaces before and after being annealed at a series of temperatures.

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Influence of thermal annealing on graphene oxide memory devices

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