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In this study,Rayleigh surface waves were analyzed in a half-space isotropic substrate underlying a piezoelectric semiconductor layer.The phase velocities were obtained in a given frequency with the aid of boundary conditions.To demonstrate the accuracy,the numerical example was carried out for the single layer GaAs structure.Numerical results show that present solutions agree well with previous ones both in the carrier-free and with-carrier cases.Therefore,the numerical example was carried out for the composite GaAs/diamond structure.In addition,the dispersive curve,attenuation coefficients and gains of GaAs/diamond structure were obtained in different given frequencies.Finally,the gains were discussed in different uniform drift fields.