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Since graphene became the leading light of the two dimensional(2D)materials science,1 a new class of atomically thick materials draws tremendous attention.2-3 Recently,group-V elemental monolayer arsenene(As)and antimonene(Sb)are predicted to be wide band-gap semiconductors,which show the promising potential in the high on/off ratio transistor and optoelectronic devices.4 Also,the monolayer 1T iron dichloride(FeCl2)was predicted as a half-metallic ground state,5 which has potential applications in 2D spintronics devices.We perform an ab initio simulation on the structural and electronic properties of van der Waals monolayer arsenene/FeCl2 heterostructures.Spin splitting appears at the conduction band minimum of arsenene due to interfacial coupling between As p and Cl p,Fe d states in spin-down channel.The maximum splitting energy is 123 meV in all the stacking configurations.Moreover,the splitting energy can be tuned by a perpendicular electric field.At a field of 5 V/nm,the spin-splitting direction can be inversed and the splitting energy is-66 meV.Additionally,the positive electric field makes the system turn from an Ohmic contact into a Schottky one,which realizes a continuous modulation on the barrier height.More importantly,the electric control of spin-splitting inversion can be converted into electric-potential difference in arsenene according to anomalous Hall effect(Fig.1).The transformation from spin-manipulation information to electric signal is useful in spintronic devices.