Towards 21%: Front Side Improvements for N-Pasha Solar Cells

• 作 者: I.Romijn[1]G.Janssen[1]M.Koppes[1]J.Liu[1]Y.Komatsu[1]J.Anker[1]A.Gutjahr[1]E.Kossen[1]A.Mewe[1]K.Tool[2]O.Siarheyeva[2]M.Ernst;
• 机 构: ECN Solar Energy, The Netherlands
• 出 处: SNEC 第八届(2014)国际太阳能产业及光伏工程(上海)论坛
• 发表日期: 2014年期

　　The purpose of the work presented in this paper is to show cost effective and industrial solutions for the tuning of boron emitters, surface preparation and passivation of n-Pasha solar cells.The n-Pasha cells now reach average efficiencies of 20.4%, with op efficiencies of 20.5%.One of the main limiting factors for n-Pasha cells currently is the boron emitter and its passivation [1].We present a simple and effective method to tune the emitter profile such that the recombination is decreased while the sheet conductance and contact ability is largely unaffected.The boron emitter profile is tuned using a new method of etching the surface by 10-20 nm, resulting in a boron emitter without boron depletion at the surface.The emitter recombination current J0E is decreased from 100 fA/cm2 to 60 fA/cm2 while maintaining the sheet resistance at 60 ohm/sq.n-Pasha cells made with these profiles exhibit a higher Voc by 6 mV and a higher efficiency by 0.2% absolute.