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  5. Bending characteristics of flexible amorphous InGaZnO thin film transistors with organic/inorganic m

Bending characteristics of flexible amorphous InGaZnO thin film transistors with organic/inorganic m

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：hnyinhao
【摘 要】
：
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si:H and poly-Si semiconductor due to the advantages of a low-cost low-temperature
【作 者】
：
D. I. Kim B. U. Hwang Y. G. Seol N.-E. Lee 
【机 构】
：
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon,Gyeonggi-do
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Thin film transistor flexible electronics oxide semiconductor multilayer gate di 
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论文部分内容阅读
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si:H and poly-Si semiconductor due to the advantages of a low-cost low-temperature process,high performance and possibility of application to flexible and transparent electronics.
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