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A novel Heusler ferrimagnet Ti2MnAl film has been grown on Si(001)substrate using magnetron sputtering.Characteris-tics of its magnetic and transport properties reveal the spin-gapless-semiconductor(SGS)nature of the stoichiometric Ti2MnAl,in agreement with theoretical prediction.The as-grown SGS-like Ti2MnAl film demonstrated high Curie tem-perature,nearly compensated ferrimagnetic properties with mall coercivity and low magnetization.It also showed semi-conductor-like behavior at room temperature allowing good compatibility with commercial Si-based semiconductor.In this regards,Ti2MnAl film is a potential candidate material for spintronics application,especially for the minimization of energy consumption of device.