Modeling and simulation of field emission from a gated carbon nanotubes array

• 作 者: DaLei;QiqigeMenggen;HeliangZhang;ZhalaWang;
• 机 构: Ordos College of Inner Mongolia University, Ordos 017000, People's Republic of China
• 出 处: 中国电子学会真空电子学分会第十九届学术年会
• 发表日期: 2013年期

　　To estimate the potential distribution and field-enhancement factor associated with a gated carbon nanotubes array on the planar cathode surface, the image charge model of floated sphere between parallel gate and cathode plates was proposed.The field-enhancement factor for the gated nanotubes array obtained by β =3 + ρ· B + W, in which ρ is the aspect ratio of CNTs, and B and W are a function of the gate-hole radius R, gate-cathode distance d and other geometrical parameters of the gated nanotubes cold cathode.The calculation result has shown that the influence of the aspect ratio of the nanotubes for field-enhancement factor is much remarkable on the gated nanotubes cold cathode.The field-enhancement factor decreases with the increasing of the gate-hole radius as the gate-cathode distance is a finite, and the influence of gate-hole radius for the field-enhancement factor could be neglected when the gate-cathode distance is infinite.Otherwise, the field-enhancement factor increases rapidly with the increasing of intertube distance and trends to a fixed value as the intertube distance is infinite.