【摘 要】
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Passivated contacts have been shown to be very promising for silicon cells due to a reduction of the metal-semiconductor surface recombination,resulting in high open circuit voltages and efficiencies.
【出 处】
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SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
Passivated contacts have been shown to be very promising for silicon cells due to a reduction of the metal-semiconductor surface recombination,resulting in high open circuit voltages and efficiencies.In contrast to the application of silicon heterojunctions structures,doped polysilicon layers are especially suited for this concept due to their compatibility with high temperature processing and conventional module technology.While highly performing passivated contact solar cells have been demonstrated in numerous varieties,most of the work is done using laboratory scale equipment and processes,and on small area cells.We present the fabrication of p and n doped polysilicon layers in a production ready LPCVD system.Doping and thickness uniformities are demonstrated on large batches of up to 500 wafers.Moreover,passivation properties are excellent with implied Vocs of up to 739 mV for n-doped and 723mV for p-doped poly respectively.These layers can be used in a variety of cell concepts such as n or p type,bifacial or full rear metallized concepts.N-Pert-like cells with efficiencies close to 21% using industrial processes and screen printed contacts are demonstrated.
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