Bipolar resistive switching modes of NiOx films affected by scanning voltage amplitude and film thic

• 作 者: X.Y.Qiu[1]Y.Y.Zhang[1]H.X.Zhu[1]R.X.Wang[1]T.Zhang[1]J.Y.Dai[2]
• 机 构: School of Physical Science and Technology,Southwest University,Chongqing 400715,China
• 出 处: 中国物理学会2015年秋季会议
• 发表日期: 2015年期

　　since 1960s,the NiO-based metal-insulator-metal(MIM)structures have been widely studied as one kind of highly promising resistive switching random access memory(RRAM)devices.Dou to the differences on cell configurations,fabrication methods,annealing conditions and measurement technologies,NiO-based RRAM cells exhibit diverse RS behaviors including unipolar,bipolar and non-polar resistive switching.