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Compared with other infrared materials, InAs/GaSb Type-Ⅱ supperlattices show a lot of advantages, such as its large adjustable spectral bandwidth, good lattice matching with GaSb substrate and low cost.We present InAs/GaSb supperlattices infrared detectors in mid wavelength and long wavelength, both of which are grown by molecular beam epitaxy (MBE).Under optimized grown conditions we get lattice matching materials with good uniformity.