Quantum-Interference Transport Through Surface Layers Of Indium-Doped ZnO Nanowires

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：zjt518

【摘要】

：

　　We have fabricated indium-doped ZnO(IZO)nanowires(NWs)and carried out four-probe electricaltransport measurements on two individual NWs with geometric diame

【作者】

：

Shao-Pin Chiu Juhn-Jong Lin

【机构】

：

InstituteofPhysics,NationalChiaoTungUniversity,Hsinchu,TaiwanInstituteofPhysics,NationalChiaoTungUni

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年1期

【关键词】

：

Indium-doped ZnO (IZO) nanowires Surface-related conduction Weak-localization ef

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论文部分内容阅读

　　We have fabricated indium-doped ZnO(IZO)nanowires(NWs)and carried out four-probe electricaltransport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K.

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Quantum-Interference Transport Through Surface Layers Of Indium-Doped ZnO Nanowires

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