GaN-based light-emitting diodes on various substrates

• 作 者: Guoqiang Li Wenliang Wang Yunhao Lin Haiyan Wang Zhiting Lin
• 机 构: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Gua
• 出 处: 中国晶体学会第六届学术年会暨会员代表大会
• 发表日期: 2016年4期
• 关键词: GaN Light-emitting diodes Substrates Crystallinedefects Nonpolar

　　GaN and related Ⅲ-nitrides have attracted remarkable attentions aspromising materials for applications in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrates for epitaxial growth of GaN-based LEDs.