The Growth Of Silicon On Ag/Ge(111)-(√3×√3)Surface

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：dsfgsdfwe

【摘要】

：

　　In this experiment,we deposited Si atoms on Ag/Ge(111)-(√3×√3)at different temperature and observed the growth of Si atoms on surfaces by Scanning Tunnel

【作者】

：

謝伯宜吳佳原蘇泰龍

【机构】

：

物理所,國立臺灣師範大學,台北,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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　　In this experiment,we deposited Si atoms on Ag/Ge(111)-(√3×√3)at different temperature and observed the growth of Si atoms on surfaces by Scanning Tunneling Microscope(STM).

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The Growth Of Silicon On Ag/Ge(111)-(√3×√3)Surface

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