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5. Deposition and Properties of Highly C-oriented of InN Films on Sapphire Substrates with ECR-plasma E

Deposition and Properties of Highly C-oriented of InN Films on Sapphire Substrates with ECR-plasma E

来源 :2011年材料表面与界面国际大会 | 被引量 : 0次 | 上传用户：caizilovenvfei

【作 者】

：

Fuwen QIN Jijun ZHAO Dong ZHANG 

【机 构】

：

School of Physics and Optoelectronic Technology, Dalian University of Technology,Dalian 116024 China

【出 处】

：

2011年材料表面与界面国际大会

【发表日期】

：

2011年9期

【关键词】

：

InN films ECR-PEMOCVD sapphire substrates semiconductor devices 

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